JPH0365016B2 - - Google Patents

Info

Publication number
JPH0365016B2
JPH0365016B2 JP57113253A JP11325382A JPH0365016B2 JP H0365016 B2 JPH0365016 B2 JP H0365016B2 JP 57113253 A JP57113253 A JP 57113253A JP 11325382 A JP11325382 A JP 11325382A JP H0365016 B2 JPH0365016 B2 JP H0365016B2
Authority
JP
Japan
Prior art keywords
electrode
via hole
semiconductor substrate
capacitor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57113253A
Other languages
English (en)
Japanese (ja)
Other versions
JPS594175A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57113253A priority Critical patent/JPS594175A/ja
Priority to DE8383303769T priority patent/DE3377960D1/de
Priority to EP83303769A priority patent/EP0098167B1/en
Publication of JPS594175A publication Critical patent/JPS594175A/ja
Priority to US07/105,472 priority patent/US4751562A/en
Publication of JPH0365016B2 publication Critical patent/JPH0365016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57113253A 1982-06-30 1982-06-30 電界効果半導体装置 Granted JPS594175A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57113253A JPS594175A (ja) 1982-06-30 1982-06-30 電界効果半導体装置
DE8383303769T DE3377960D1 (en) 1982-06-30 1983-06-29 A field-effect semiconductor device
EP83303769A EP0098167B1 (en) 1982-06-30 1983-06-29 A field-effect semiconductor device
US07/105,472 US4751562A (en) 1982-06-30 1987-09-30 Field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57113253A JPS594175A (ja) 1982-06-30 1982-06-30 電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS594175A JPS594175A (ja) 1984-01-10
JPH0365016B2 true JPH0365016B2 (en]) 1991-10-09

Family

ID=14607458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57113253A Granted JPS594175A (ja) 1982-06-30 1982-06-30 電界効果半導体装置

Country Status (2)

Country Link
US (1) US4751562A (en])
JP (1) JPS594175A (en])

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4807022A (en) * 1987-05-01 1989-02-21 Raytheon Company Simultaneous formation of via hole and tub structures for GaAs monolithic microwave integrated circuits
US4970578A (en) * 1987-05-01 1990-11-13 Raytheon Company Selective backside plating of GaAs monolithic microwave integrated circuits
JPH0273664A (ja) * 1988-09-08 1990-03-13 Nec Corp 電界効果トランジスタ
US4937660A (en) * 1988-12-21 1990-06-26 At&T Bell Laboratories Silicon-based mounting structure for semiconductor optical devices
JPH02257643A (ja) * 1989-03-29 1990-10-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
US4974039A (en) * 1989-08-14 1990-11-27 Raytheon Company Field effect transistor having an integrated capacitor
US5319237A (en) * 1990-03-09 1994-06-07 Thomson Composants Microondes Power semiconductor component
FR2697698A1 (fr) * 1992-11-04 1994-05-06 Philips Electronique Lab Dispositif semiconducteur comprenant un circuit amplificateur distribué monolithiquement intégré, à large bande et fort gain.
DE19851458C2 (de) * 1998-11-09 2000-11-16 Bosch Gmbh Robert Monolithisch integrierte Schaltung mit mehreren, einen Nebenschluß nach Masse bildenden Kapazitäten und Verstärkerschaltung
WO2001003290A1 (fr) * 1999-06-30 2001-01-11 Mitsubishi Denki Kabushiki Kaisha Amplificateur de micro-ondes
EP1085572A3 (en) * 1999-09-16 2006-04-19 Texas Instruments Incorporated Low pass filter integral with semiconductor package
US7151036B1 (en) * 2002-07-29 2006-12-19 Vishay-Siliconix Precision high-frequency capacitor formed on semiconductor substrate
US6538300B1 (en) * 2000-09-14 2003-03-25 Vishay Intertechnology, Inc. Precision high-frequency capacitor formed on semiconductor substrate
JP4145301B2 (ja) * 2003-01-15 2008-09-03 富士通株式会社 半導体装置及び三次元実装半導体装置
US7199039B2 (en) * 2003-05-19 2007-04-03 Intel Corporation Interconnect routing over semiconductor for editing through the back side of an integrated circuit
US20050034075A1 (en) * 2003-06-05 2005-02-10 Ch2M Hill, Inc. GIS-based emergency management
JP4353861B2 (ja) * 2004-06-30 2009-10-28 Ｎｅｃエレクトロニクス株式会社 半導体装置
FI20051236A0 (fi) * 2005-12-01 2005-12-01 Artto Mikael Aurola Puolijohde apparaatti
US7557036B2 (en) * 2006-03-30 2009-07-07 Intel Corporation Method, system, and apparatus for filling vias
JP5060550B2 (ja) * 2006-06-20 2012-10-31 エヌエックスピー ビー ヴィ パワーアンプ・アセンブリ
KR101096041B1 (ko) * 2009-12-10 2011-12-19 주식회사 하이닉스반도체 반도체 패키지

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969745A (en) * 1974-09-18 1976-07-13 Texas Instruments Incorporated Interconnection in multi element planar structures
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET
US4183041A (en) * 1978-06-26 1980-01-08 Rca Corporation Self biasing of a field effect transistor mounted in a flip-chip carrier
JPS57104265A (en) * 1980-12-19 1982-06-29 Fujitsu Ltd Semiconductor device
US4456888A (en) * 1981-03-26 1984-06-26 Raytheon Company Radio frequency network having plural electrically interconnected field effect transistor cells

Also Published As

Publication number Publication date
US4751562A (en) 1988-06-14
JPS594175A (ja) 1984-01-10

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